New Product
SiA917DJ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.110 at V GS = - 4.5 V
0.185 at V GS = - 2.5 V
I D (A)
- 4.5 a
- 4.5 a
Q g (Typ.)
3 nC
? Halogen-free
? TrenchFET ? Power MOSFET
? New Thermally Enhanced PowerPAK ?
SC-70 Package
RoHS
COMPLIANT
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
Devices
PowerPAK SC-70-6 Dual
1
S 1
Markin g Code
? Load Switch, PA Switch and Battery Switch for Portable
S 1 S 2
D 1
2
G 1
3
D 2
Part # code
DEX
XXX
G 1
G 2
D 1
6
D 2
Lot Tracea b ility
and Date code
G 2
5
2.05 mm
4
S 2
2.05 mm
D 1
D 2
Orderin g Information: SiA917DJ-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel MOSFET P-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
- 20
± 12
- 4.5 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 4.5 a
- 3.3 b, c
- 2.4 b, c
- 10
- 4.5 a
- 1.6 b, c
6.5
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
5
1.9 b, c
W
T A = 70 °C
1.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET) b, f t ≤ 5s
Maximum Junction-to-Case (Drain) (MOSFET) Steady State
R thJA
R thJC
52 65
12.5 16
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 70444
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
相关PDF资料
SIB406EDK-T1-GE3 MOSFET N-CH D-S 20V SC-75-6
SIB408DK-T1-GE3 MOSFET N-CH D-S 30V PPAK SC75-6L
SIB412DK-T1-GE3 MOSFET N-CH 20V 9A SC75-6
SIB413DK-T1-GE3 MOSFET P-CH 20V 9A SC75-6
SIB433EDK-T1-GE3 MOSFET P-CH 20V SC-75-6
SIB452DK-T1-GE3 MOSFET N-CH 190V 1.5A SC75-6
SIB457EDK-T1-GE3 MOSFET P-CH D-S 20V PPAK SC75-6L
SIB914DK-T1-GE3 MOSFET 2N-CH 8V 1.5A PPAK SC75-6
相关代理商/技术参数
SIA920DJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 8 V (D-S) MOSFET
SIA920DJ-T1-GE3 功能描述:MOSFET 8V 4.5A 7.8W 27mOhms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA921EDJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
SIA921EDJ-T1-GE3 功能描述:MOSFET -20V 59mOhm@4.5V 4.5A P-Ch G-III RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA921EDJ-T4-E3 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SIA921EDJ-T4-GE3 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET 2P-CH 20V 4.5A SC70-6
SIA922EDJ-T1-GE3 功能描述:MOSFET 30V .064ohm@4.5V 4.5A N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA923EDJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20 V (D-S) MOSFET